Micron Technology is involved in the project since its purchase of Numonyx in 2011. Thanks to this acquisition, Micron Technology designs and manufactures a full complement of integrated NOR, NAND and Phase Change non-volatile memory technologies and products to meet the increasingly sophisticated needs of customers in the cellular and embedded markets. Before the purchase, Numonyx combined the technology and manufacturing expertise of the flash memory divisions of Intel Corporation and STMicroelectronics, and was dedicated to providing high density, low power memory technologies and packaging solutions to a global base of customers.
Micron research activities in this new activity are performed in the R2 Technology Center in Agrate Brianza (Italy). This center was born from the transformation of the previous R1 center, built in 1988 for 150mm wafers, which allowed the development of the first generations of NVM technology from 1 μm a 0.25 μm. Fully refurbished, expanded and converted to 200mm wafers, it is now an up-to-date Pilot Line with 6860m2 of Class 1 clean room, fully equipped to support NVM development beyond the 45nm technology node. At the moment the R2 technology center is assisting in the ramp-up of 65nm NOR Flash and 90nm Phase-Change Memory generations, and developing 45nm Phase-Change technology and new architectures for 32nm NAND Flash generation.
To meet demand for Micron memory chips, the company will possess both wafer fabrication and assembly and test manufacturing facilities in addition to holding external supply agreements. These facilities include six 200 mm and three 300 mm wafer fabs, including the ex-Numonyx facilities in Israel, Italy and Singapore. This gives Micron the flexibility to produce any combination of NOR, NAND and RAM wafers depending on customer demand.